Datasheet > AP80T12GP-HF

AP80T12GP-HF

更新时间： 2024-01-10 02:34:26

品牌	Logo	应用领域
富鼎先进 - A-POWER		局域网开关脉冲晶体管
页数	文件大小	规格书
4页	96K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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中文翻译

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技术参数
数据手册

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AP80T12GP-HF 技术参数

生命周期：	Contact Manufacturer	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.76
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	120 V
最大漏极电流 (ID)：	88 A	最大漏源导通电阻：	0.0092 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	300 A	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

AP80T12GP-HF 数据手册

AP80T12GP-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

120V

9.2mΩ

88A

▼ Lower On-resistance

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP80T12 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-220(P)

The TO-220 package is widely preferred for all commercial-

industrial through hole applications. The low thermal resistance and

low package cost contribute to the worldwide popular package.

Absolute Maximum Ratings

Symbol

Parameter

Rating

120

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

300

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

166

℃

Total Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maixmum Thermal Resistance, Junction-ambient

0.75

Rthj-a

Data and specifications subject to change without notice

201207031

12 3 4

中文翻译

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