Datasheet > AP80N03GP-HF

AP80N03GP-HF

更新时间： 2024-09-24 01:19:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
7页	82K
描述
Fast Switching Characteristic

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数据手册

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AP80N03GP-HF 数据手册

AP80N03GS/P-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-Resistance

BV_DSS

R_DS(ON)

I_D

30V

8mΩ

80A

▼ Fast Switching Characteristic

▼ Simple Drive Requirement

▼ RoHS Compliant & Halogen-Free

Description

AP80N03 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

The TO-263 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited for

high current application due to the low connection resistance. The

through-hole version (AP80N03P) are available for low-profile

applications.

TO-220(P)

TO-263(S)

Absolute Maximum Ratings@T_j=25 C(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

315

P_D@T_C=25℃

T_STG

Total Power Dissipation

83.3

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

1.5

Rthj-a

Data & specifications subject to change without notice

201408263

12 3 4 5 6 7

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