Datasheet > AP6NA8R2H

AP6NA8R2H

更新时间： 2024-09-16 17:15:43

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	234K
描述
TO-252

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AP6NA8R2H 数据手册

AP6NA8R2H

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

R_DS(ON)

I_D

60V

8.2mΩ

59A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP6NA8R2 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

TO-252(H)

The TO-252 package is widely preferred for all commercial-industrial surface

mount applications using infrared reflow technique and suited for high

current application due to the low connection resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

+20

Gate-Source Voltage

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

37.3

200

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

℃

Total Power Dissipation

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

2.5

Rthj-a

62.5

202108311

12 3 4 5 6

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