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AP6NA6R5P PDF预览

AP6NA6R5P

更新时间: 2024-11-21 17:15:47
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 73K
描述
TO-220

AP6NA6R5P 数据手册

 浏览型号AP6NA6R5P的Datasheet PDF文件第2页浏览型号AP6NA6R5P的Datasheet PDF文件第3页浏览型号AP6NA6R5P的Datasheet PDF文件第4页浏览型号AP6NA6R5P的Datasheet PDF文件第5页浏览型号AP6NA6R5P的Datasheet PDF文件第6页 
AP6NA6R5P  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Rg & UIS Test  
BVDSS  
RDS(ON)  
ID  
60V  
6.5mΩ  
66A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
AP6NA6R5 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for all commercial-industrial  
through hole applications. The low thermal resistance and low  
package cost contribute to the worldwide popular package.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
60  
+20  
Gate-Source Voltage  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
66  
A
41.8  
200  
A
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
50  
W
W
mJ  
Total Power Dissipation  
2
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
80  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
2.5  
62  
Rthj-a  
1
202201261