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AP6NA4R2H PDF预览

AP6NA4R2H

更新时间: 2024-12-01 17:15:35
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 112K
描述
TO-252

AP6NA4R2H 数据手册

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AP6NA4R2H  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Rg & UIS Test  
BVDSS  
60V  
D
S
Simple Drive Requirement  
RDS(ON)  
4.2m  
Low On-resistance  
G
RoHS Compliant & Halogen-Free  
Description  
AP6NA4R2 series are from Advanced Power innovated design and  
G
D
S
TO-252(H)  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
The TO-252 package is widely preferred for all commercial-  
industrial surface mount applications using infrared reflow  
technique and suited for high current application due to the low  
connection resistance.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
60  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V4(Silicon Limited)  
Drain Current, VGS @ 10V4(Package Limited)  
Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=25℃  
ID@TC=100℃  
IDM  
100  
A
75  
A
71  
A
Pulsed Drain Current1  
320  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
Total Power Dissipation3  
Single Pulse Avalanche Energy6  
Storage Temperature Range  
Operating Junction Temperature Range  
75  
W
W
mJ  
2.4  
135  
TSTG  
-55 to 175  
-55 to 175  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
2
Rthj-a  
62.5  
1
202310241