AP6NA3R8H
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
60V
D
S
▼ Simple Drive Requirement
RDS(ON)
3.8mΩ
▼ Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
Description
AP6NA3R8 series are from Advanced Power innovated design and
4604 series are from Advanced Power innovated design
G
D
S
TO-252(H)
silicon process technology to achieve the lowest possible on-
and silicon process technology to achieve the lowest
resistance and fast switching performance. It provides the designer
on-resistance and fast switching performance. It provides the
with an extreme efficient device for use in a wide range of power
designer with an extreme efficient device for use in a wide
applications.
range of power applications.
The TO-220 package is widely preferred for all commercial-
The TO-252 package is widely preferred for all commercial-
industrial through hole applications. The low thermal
industrial surface mount applications using infrared reflow
resistance and low package cost contribute to the wo ldwide
technique and suited for high current application due to the low
popular package.
connection resistance.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
60
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V4(Silicon Limited)
Drain Current, VGS @ 10V4(Package Limited)
Drain Current, VGS @ 10V4(Package Limited)
Pulsed Drain Current1
ID@TC=25℃
ID@TC=25℃
ID@TC=100℃
IDM
110
A
75
A
75
A
320
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy6
83.3
W
W
mJ
℃
℃
2.4
135
TSTG
Storage Temperature Range
-55 to 175
-55 to 175
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
1.8
Rthj-a
62.5
1
202310241