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AP6NA3R5R PDF预览

AP6NA3R5R

更新时间: 2024-11-19 17:15:47
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 73K
描述
TO-262

AP6NA3R5R 数据手册

 浏览型号AP6NA3R5R的Datasheet PDF文件第2页浏览型号AP6NA3R5R的Datasheet PDF文件第3页浏览型号AP6NA3R5R的Datasheet PDF文件第4页浏览型号AP6NA3R5R的Datasheet PDF文件第5页浏览型号AP6NA3R5R的Datasheet PDF文件第6页 
AP6NA3R5R  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Rg & UIS Test  
BVDSS  
60V  
Simple Drive Requirement  
RDS(ON)  
3.5mΩ  
Low On-resistance  
G
RoHS Compliant & Halogen-Free  
Description  
AP6NA3R5seriesarefromAdvancedPowerinnovated design and  
siliconprocesstechnologytoachievethelowestpossible on-  
resistanceandfastswitchingperformance.Itprovidesthedesigner  
withanextremeefficientdevicefor usein awiderange ofpower  
applications.
G
D
S
TO-262(R)  
TheTO-262packageiswidelypreferred forcommercial-industrial  
through-holeapplicationsandsuitedforlowvoltageapplications  
suchasDC/DCconverters.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
60  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
105  
A
66  
A
360  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
69.4  
W
W
mJ  
Total Power Dissipation  
2
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
173  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
1.8  
62  
Rthj-a  
1
202211151