Datasheet > AP6NA2R8MT

AP6NA2R8MT

更新时间： 2024-09-14 17:15:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	73K
描述
PMPAK-5x6

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AP6NA2R8MT 数据手册

AP6NA2R8MT

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

60V

▼ Simple Drive Requirement

▼ Low On-resistance

R_DS(ON)

2.8mΩ

▼ RoHS Compliant & Halogen-Free

Description

AP6NA2R8 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The PMPAK

5x6 package is special for DC-DC converters

PMPAK^®5x6

application and the foot print is compatible with SO-8 with backside

heat sink and lower profile.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V⁴(Silicon Limited)

Drain Current, V_GS@ 10V⁴(Package Limited)

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

132

100

32.5

350

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁵

Storage Temperature Range

Operating Junction Temperature Range

83.3

℃

173

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

1.5

Rthj-a

202206241

12 3 4 5 6

中文翻译

下载PDF

与AP6NA2R8MT相关器件

型号	品牌	获取价格	描述	数据表
AP6NA3R0H	A-POWER	获取价格	TO-252
AP6NA3R2CST	A-POWER	获取价格	SPPAK-5x6
AP6NA3R2LMT	A-POWER	获取价格	PMPAK-5x6
AP6NA3R2MT	A-POWER	获取价格	PMPAK-5x6
AP6NA3R3LI	A-POWER	获取价格	TO-220CFM
AP6NA3R3LMT	A-POWER	获取价格	PMPAK-5x6
AP6NA3R4LIT	A-POWER	获取价格	TO-220CFM-T
AP6NA3R5H	A-POWER	获取价格	TO-252
AP6NA3R5IT	A-POWER	获取价格	TO-220CFM-T
AP6NA3R5P	A-POWER	获取价格	TO-220