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AP6NA2R7IT PDF预览

AP6NA2R7IT

更新时间: 2024-11-21 17:15:19
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 74K
描述
TO-220CFM-T

AP6NA2R7IT 数据手册

 浏览型号AP6NA2R7IT的Datasheet PDF文件第2页浏览型号AP6NA2R7IT的Datasheet PDF文件第3页浏览型号AP6NA2R7IT的Datasheet PDF文件第4页浏览型号AP6NA2R7IT的Datasheet PDF文件第5页浏览型号AP6NA2R7IT的Datasheet PDF文件第6页 
AP6NA2R7IT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Rg & UIS Test  
BVDSS  
RDS(ON)  
ID  
60V  
2.78mΩ  
83A  
D
S
Simple Drive Requirement  
Low On-resistance  
G
RoHS Compliant & Halogen-Free  
Description  
AP6NA2R7seriesarefromAdvancedPowerinnovated design and  
siliconprocesstechnologytoachievethelowestpossible on-  
resistanceandfastswitchingperformance.Itprovidesthedesigner  
withanextremeefficientdevicefor usein awiderange ofpower  
applications.
G
D
TO-220CFM-T(IT)  
S
TheTO-220CFMpackage iswidelypreferredfor all commercial-  
industrialthroughholeapplications.Themoldcompoundprovides  
ahighisolationvoltage capability and low thermal resistance  
between the tab and the external heat-sink.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
60  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
83  
A
53  
A
320  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
32.8  
W
W
mJ  
Total Power Dissipation  
1.92  
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
125  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
3.8  
65  
Rthj-a  
1
202303061