Datasheet > AP6NA2R4P

AP6NA2R4P

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	113K
描述
TO-220

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AP6NA2R4P 数据手册

AP6NA2R4P

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

60V

2.4mΩ

175A

▼ Simple Drive Requirement

R_DS(ON)

▼ Fast Switching Characteristic

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP466N0A42Rs4ersieesrieasrearferofrmomAdAvdavnacnecdedPPoowweerriinnnnoovvaatteedd design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

The TO-220 package is widely preferred for all commercial-

industrial through hole applications. The low thermal

resistance and low package cost contribute to the worldwide

popular package.

TO-220(P)

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V³(Silicon Limited)

Drain Current, V_GS@ 10V³(Package Limited)

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

175

130

111

Pulsed Drain Current¹

520

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

125

℃

Total Power Dissipation

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

320

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

Rthj-a

202210031

12 3 4 5 6

中文翻译

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