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AP6NA2R4IT PDF预览

AP6NA2R4IT

更新时间: 2024-11-05 17:15:43
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 74K
描述
TO-220CFM-T

AP6NA2R4IT 数据手册

 浏览型号AP6NA2R4IT的Datasheet PDF文件第2页浏览型号AP6NA2R4IT的Datasheet PDF文件第3页浏览型号AP6NA2R4IT的Datasheet PDF文件第4页浏览型号AP6NA2R4IT的Datasheet PDF文件第5页浏览型号AP6NA2R4IT的Datasheet PDF文件第6页 
AP6NA2R4IT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Rg & UIS Test  
BVDSS  
RDS(ON)  
ID  
60V  
2.4mΩ  
93A  
Simple Drive Requirement  
Low On-resistance  
G
RoHS Compliant & Halogen-Free  
Description  
AP6NA2R4seriesarefromAdvancedPowerinnovateddesignand  
silicon processtechnologytoachievethelowestpossibleon-resistance  
andfastswitchingperformance.Itprovidesthe designer with an  
extremeefficient deviceforuseinawiderangeof powerapplications.  
G
D
S
TO-220CFM-T(IT)  
The TO-220CFMpackageiswidelypreferred for all commercial-  
industrial through holeapplications.The moldcompoundprovides a  
high isolationvoltagecapabilityand low thermalresistancebetween  
thetaband the external heat-sink.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
60  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
93  
A
59  
A
380  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
34.7  
W
W
mJ  
Total Power Dissipation  
1.92  
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
180  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
3.6  
65  
Rthj-a  
1
202205271