AP6NA2R3MT
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
60V
D
S
▼ Simple Drive Requirement
▼ Lower On-resistance
RDS(ON)
2.3mΩ
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▼ RoHS Compliant & Halogen-Free
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D
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Description
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AP6NA2R3 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
S
S
S
G
®
PMPAK® 5x6
The PMPAK
5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
60
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V6(Silicon Limited)
Drain Current, VGS @ 10V6(Package Limited)
Drain Current, VGS @ 10V6(Package Limited)
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
ID@TC=25℃
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
160
A
100
A
100
A
35.7
A
28.6
A
640
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
104
W
W
mJ
℃
℃
5
151.2
-55 to 150
-55 to 150
TSTG
TJ
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
1.2
25
Rthj-a
1
202301101