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AP6NA2R3MT PDF预览

AP6NA2R3MT

更新时间: 2024-11-19 17:15:51
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 107K
描述
PMPAK-5x6

AP6NA2R3MT 数据手册

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AP6NA2R3MT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Rg & UIS Test  
BVDSS  
60V  
D
S
Simple Drive Requirement  
Lower On-resistance  
RDS(ON)  
2.3m  
G
RoHS Compliant & Halogen-Free  
D
D
D
Description  
D
AP6NA2R3 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
S
S
S
G
®
PMPAK® 5x6  
The PMPAK  
5x6 package is special for DC-DC converters  
application and the foot print is compatible with SO-8 with backside  
heat sink and lower profile.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
60  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V6(Silicon Limited)  
Drain Current, VGS @ 10V6(Package Limited)  
Drain Current, VGS @ 10V6(Package Limited)  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=25℃  
ID@TC=100℃  
ID@TA=25℃  
ID@TA=70℃  
IDM  
160  
A
100  
A
100  
A
35.7  
A
28.6  
A
640  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
Total Power Dissipation3  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
104  
W
W
mJ  
5
151.2  
-55 to 150  
-55 to 150  
TSTG  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
1.2  
25  
Rthj-a  
1
202301101