Datasheet > AP6NA1R7CMT

AP6NA1R7CMT

更新时间： 2024-12-01 17:15:47

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	72K
描述
PMPAK-5x6

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AP6NA1R7CMT 数据手册

AP6NA1R7CMT

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

60V

▼ 100% R_g& UIS Test

R_DS(ON)

1.7mΩ

▼ Ultra Low On-resistance

▼ RoHS Compliant & Halogen-Free

Description

AP6NA1R7C series are from Advanced Power innovated

design and silicon process technology to achieve the lowest

possible on-resistance and fast switching performance. It

provides the designer with an extreme efficient device for use

in a wide range of power applications.

The PMPAK ^®5x6 package is special for DC-DC converters

application and the foot print is compatible with SO-8 with

backside heat sink and lower profile.

PMPAK^®

5x6

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Drain Current, V_GS@ 10V⁴(Silicon Limited)

Drain Current, V_GS@ 10V⁴

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

190

100

41.6

33.3

350

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁵

Storage Temperature Range

Operating Junction Temperature Range

104

℃

180

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

1.2

Rthj-a

202007161

12 3 4 5 6

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