AP6A038MT
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1 D1 D2 D2
▼ Simple Drive Requirement
BVDSS
60V
▼ Fast Switching Characteristic
RDS(ON)
38mΩ
▼ RoHS Compliant & Halogen-Free
D1
D1
D2
D2
Description
S1 G1 S2 G2
AP6A038 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
S1
G1
S2
G2
The PMPAK ® 5x6 package is special for voltage conversion
application using standard infrared reflow technique with the
backside heat sink to achieve the good thermal performance.
o
.
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
60
Gate-Source Voltage
+20
V
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
16.2
A
6.7
A
5.3
A
30
A
PD@TA=25℃
TSTG
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3.57
W
℃
℃
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Units
℃/W
℃/W
Rating
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
6
Rthj-a
35
1
202006121