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AP6A038MT PDF预览

AP6A038MT

更新时间: 2024-09-16 17:15:39
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 236K
描述
PMPAK-5x6

AP6A038MT 数据手册

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AP6A038MT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
D1 D1 D2 D2  
Simple Drive Requirement  
BVDSS  
60V  
Fast Switching Characteristic  
RDS(ON)  
38mΩ  
RoHS Compliant & Halogen-Free  
D1  
D1  
D2  
D2  
Description  
S1 G1 S2 G2  
AP6A038 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
S1  
G1  
S2  
G2  
PMPAK
®
5x6  
The PMPAK ® 5x6 package is special for voltage conversion  
application using standard infrared reflow technique with the  
backside heat sink to achieve the good thermal performance.  
o
.
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
60  
Gate-Source Voltage  
+20  
V
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
16.2  
A
6.7  
A
5.3  
A
30  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
3.57  
W
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Units  
/W  
/W  
Rating  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
6
Rthj-a  
35  
1
202006121  

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