AP6982GM

更新时间： 2024-11-18 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		开关
页数	文件大小	规格书
7页	102K
描述
Low On-resistance, Fast Switching Characteristic

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AP6982GM 数据手册

AP6982GM

Pb Free Plating Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Low On-resistance

CH-1 BV_DSS

30V

18mΩ

8.5A

▼ Fast Switching Characteristic

▼ Surface Mount Package

R_DS(ON)

I_D

CH-2 BV_DSS

R_DS(ON)

30V

SO-8

26mΩ

7.3A

Description

I_D

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

CH-1

CH2

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±25

8.5

6.8

±25

7.3

5.8

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

P_D@T_A=25℃

2.0

W/℃

℃

0.016

T_STG

T_J

-55 to 150

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

201220042

12 3 4 5 6 7

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