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AP6679GS-HF_16 PDF预览

AP6679GS-HF_16

更新时间: 2024-11-19 01:21:27
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 58K
描述
Fast Switching Characteristic

AP6679GS-HF_16 数据手册

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AP6679GS/P-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Lower On-resistance  
BVDSS  
RDS(ON)  
ID  
-30V  
9mΩ  
-75A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
AP6679 series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and  
fast switching performance. It provides the designer with an extreme  
efficient device for use in a wide range of power applications.  
The TO-263 package is widely preferred for all commercial-industrial  
surface mount applications using infrared reflow technique and suited  
for high current application due to the low connection resistance. The  
through-hole version (AP6679GP) are available for low-profile  
applications.  
G
D
TO-263(S)  
TO-220(P)  
S
G
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
-30  
Units  
V
VDS  
VGS  
Gate-Source Voltage  
+25  
V
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
-75  
A
-50  
A
-300  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
89  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)4  
Maximum Thermal Resistance, Junction-ambient  
1.4  
40  
62  
Rthj-a  
Rthj-a  
Data and specifications subject to change without notice  
1
201501155  

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