AP6679GP-HF

更新时间： 2024-11-18 13:05:35

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AP6679GP-HF 数据手册

AP6679BGH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-resistance

BV_DSS

R_DS(ON)

I_D

-30V

9mΩ

-63A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-252(H)

TO-251(J)

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP6679BGJ) is

available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-63

-40

-240

P_D@T_C=25℃

T_STG

Total Power Dissipation

54.3

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

2.3

Units

℃/W

Rthj-c

Maximum Thermal Resistance Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

Rthj-a

62.5

110

Rthj-a

Data and specifications subject to change without notice

201004142

12 3 4

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