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AP6679BGJ-HF PDF预览

AP6679BGJ-HF

更新时间: 2024-09-16 01:21:27
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 70K
描述
Fast Switching Characteristic

AP6679BGJ-HF 数据手册

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AP6679BGH/J-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Low On-resistance  
BVDSS  
RDS(ON)  
ID  
-30V  
9mΩ  
-63A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
AP6679B series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and fast  
switching performance. It provides the designer with an extreme efficient  
device for use in a wide range of power applications.  
The TO-252 package is widely preferred for all commercial-industrial  
surface mount applications using infrared reflow technique and suited for  
high current application due to the low connection resistance. The  
through-hole version (AP6679BGJ) are available for low-profile  
applications.  
G
D
TO-252(H)  
TO-251(J)  
S
G
D
S
o
.
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
-30  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
-63  
A
-40  
A
-240  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
54.3  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maximum Thermal Resistance, Junction-ambient  
2.3  
62.5  
110  
Rthj-a  
Rthj-a  
Data and specifications subject to change without notice  
1
201409263AP  

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