AP65SL190AWL
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
VDS @ Tj,max.
RDS(ON)
700V
0.19Ω
20A
D
S
▼ Fast Switching Characteristic
3
▼ Simple Drive Requirement
ID
G
▼ RoHS Compliant & Halogen-Free
Description
AP65SL190A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-247 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
S
TO-247 (WL)
D
G
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Rating
650
Units
V
VDS
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
ID@TC=100℃
IDM
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
20
A
12.3
48
A
A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
50
V/ns
W
PD@TC=25℃
PD@TA=25℃
EAS
147
Total Power Dissipation
3.12
300
W
Single Pulse Avalanche Energy4
Peak Diode Recovery dv/dt5
Storage Temperature Range
Operating Junction Temperature Range
mJ
V/ns
℃
dv/dt
15
TSTG
-55 to 150
-55 to 150
TJ
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
0.85
40
Rthj-a
Data & specifications subject to change without notice
1
201506221