Datasheet > AP65SL045AFWL

AP65SL045AFWL

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	111K
描述
TO-247

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AP65SL045AFWL 数据手册

AP65SL045AFWL

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Ultra-Fast Body Diode

BV_DSS

R_DS(ON)

I_D

650V

45mΩ

63.7A

▼ 100% R_g& UIS Test

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP65SL045AF series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-247 (WL)

The TO-247 package is widely preferred for commercial-industrial

applications. The device is suited for switch mode power supplies,

DC-AC converters and high current high speed switching circuits.

Absolute Maximum Ratings@T_j=25 C(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

650

Gate-Source Voltage

+20

Gate-Source Voltage, AC (f > 1Hz)

Drain Current, V_GS@ 10V

+30

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

63.7

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

40.3

210

dv/dt

MOSFET dv/dt Ruggedness (V_DS= 0 …600V )

Total Power Dissipation

V/ns

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

500

Total Power Dissipation

3.12

Single Pulse Avalanche Energy³

Peak Diode Recovery dv/dt⁴

Storage Temperature Range

Operating Junction Temperature Range

1875

V/ns

℃

dv/dt

T_STG

-55 to 150

T_J

℃

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

0.25

Rthj-a

Data & specifications subject to change without notice

201611282

12 3 4 5 6

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