Datasheet > AP65SE180DIT

AP65SE180DIT

更新时间： 2024-10-31 17:15:55

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	67K
描述
TO-220CFM-T

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AP65SE180DIT 数据手册

AP65SE180DIT

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

650V

0.18Ω

18.7A

▼ Low t_rr/ Q_rr

R_DS(ON)

3,4

▼ Simple Drive Requirement

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP65SE180D series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-220CFM-T(IT)

The TO-220CFM package is widely preferred for all commercial-

industrial through hole applications. The mold compound provides a

high isolation voltage capability and low thermal resistance between

the tab and the external heat-sink.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

650

Units

V_DS

V_GS

Gate-Source Voltage

+20

Gate-Source Voltage, AC (f > 1Hz)

Drain Current, V_GS@ 10V^3,4

Pulsed Drain Current¹

+30

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

18.7

11.8

dv/dt

MOSFET dv/dt Ruggedness (V_DS= 0 …480V )

Total Power Dissipation

V/ns

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

32.8

Total Power Dissipation

1.92

Single Pulse Avalanche Energy⁵

Peak Diode Recovery dv/dt⁶

Storage Temperature Range

Operating Junction Temperature Range

200

V/ns

℃

dv/dt

T_STG

-55 to 150

T_J

℃

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

3.8

Rthj-a

202207151

12 3 4 5

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