AP65SA210DDT8
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Pin 5 Drain
▼ 100% Rg & UIS Test
BVDSS
650V
210mΩ
17.8A
▼ Low trr / Qrr
RDS(ON)
Pin 1
Gate
3,4
▼ Simple Drive Requirement
ID
▼ RoHS Compliant & Halogen-Free
Pin 2
Driver Source
Top View
Pin 3,4
Description
Power Source
5
AP65SA210 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
1
2
3
4
PDFN 8X8_HV
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Rating
650
Units
V
VDS
VGS
VGS
Gate-Source Voltage
+20
V
Gate-Source Voltage, AC (f > 1Hz)
Drain Current, VGS @ 10V3,4
Drain Current, VGS @ 10V3,4
Pulsed Drain Current1
+30
V
ID@TC=25℃
ID@TC=100℃
IDM
17.8
11.2
44
A
A
A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …480V )
Total Power Dissipation
Total Power Dissipation7
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
Storage Temperature Range
Operating Junction Temperature Range
40
V/ns
W
PD@TC=25℃
PD@TA=25℃
EAS
125
2.5
W
200
mJ
V/ns
℃
dv/dt
15
TSTG
-55 to 150
-55 to 150
TJ
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient7
1
Rthj-a
50
1
201903121