Datasheet > AP65SA190DR

AP65SA190DR

更新时间： 2024-10-31 17:15:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	238K
描述
TO-262

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AP65SA190DR 数据手册

AP65SA190DR

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

650V

0.19Ω

20A

▼ Low t_rr/ Q_rr

R_DS(ON)

3,4

▼ Simple Drive Requirement

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP65SA190D series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

TO-262(R)

The TO-262 package is widely preferred for commercial-industrial through-

hole applications and suited for low voltage applications such as DC/DC

converters.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

650

Units

V_DS

V_GS

Gate-Source Voltage

+20

Gate-Source Voltage, AC (f > 1Hz)

Drain Current, V_GS@ 10V^3,4

Pulsed Drain Current¹

+30

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

12.3

dv/dt

MOSFET dv/dt Ruggedness (V_DS= 0 …480V )

Total Power Dissipation

V/ns

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

125

Total Power Dissipation

Single Pulse Avalanche Energy⁵

Peak Diode Recovery dv/dt⁶

Storage Temperature Range

Operating Junction Temperature Range

200

V/ns

℃

dv/dt

T_STG

-55 to 150

T_J

℃

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

Rthj-a

202005191

12 3 4 5 6

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