AP65SA074FWL
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
RDS(ON)
ID
650V
74mΩ
37.5A
D
S
▼ Ultra-Fast Body Diode
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
Description
AP65SA074F series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-247 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
S
TO-247 (WL)
D
G
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Rating
650
Units
V
VDS
VGS
VGS
Gate-Source Voltage
+20
V
Gate-Source Voltage, AC (f > 1Hz)
Drain Current, VGS @ 10V
+30
V
ID@TC=25℃
ID@TC=100℃
IDM
37.5
A
Drain Current, VGS @ 10V
Pulsed Drain Current1
23.7
A
110
A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …480V )
Total Power Dissipation
40
V/ns
W
PD@TC=25℃
PD@TA=25℃
EAS
277.7
3.12
Total Power Dissipation
W
Single Pulse Avalanche Energy3
Peak Diode Recovery dv/dt4
Storage Temperature Range
Operating Junction Temperature Range
512
mJ
V/ns
℃
dv/dt
15
TSTG
-55 to 150
-55 to 150
TJ
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
0.45
40
Rthj-a
1
201805171