AP65CM220EH
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
650V
0.22Ω
20.5A
D
S
▼ Fast Switching Characteristic
RDS(ON)
G
6
▼ Simple Drive Requirement
ID
▼ RoHS Compliant & Halogen-Free
Description
AP65CM220E series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Rating
650
Units
V
VDS
VGS
VGS
Gate-Source Voltage
+20
V
Gate-Source Voltage, AC (f > 1Hz)
Drain Current, VGS @ 10V6
Drain Current, VGS @ 10V6
+30
V
ID@TC=25℃
ID@TC=100℃
IDM
20.5
12.9
55
A
A
Pulsed Drain Current1
A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …480V )
Total Power Dissipation
Total Power Dissipation5
Single Pulse Avalanche Energy3
Peak Diode Recovery dv/dt4
Storage Temperature Range
Operating Junction Temperature Range
20
V/ns
W
PD@TC=25℃
PD@TA=25℃
EAS
104
2
W
200
mJ
V/ns
℃
dv/dt
50
TSTG
-55 to 150
-55 to 150
TJ
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)5
1.2
Rthj-a
62.5
1
202312042