AP60SL160DS
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
600V
0.16Ω
20A
D
S
▼ Low trr / Qrr
RDS(ON)
3
▼ Simple Drive Requirement
ID
G
▼ RoHS Compliant & Halogen-Free
Description
AP60SL160D series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Rating
600
Units
V
VDS
VGS
VGS
Gate-Source Voltage
+20
V
Gate-Source Voltage, AC (f > 1Hz)
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
+30
V
ID@TC=25℃
ID@TC=100℃
IDM
20
A
12.3
48
A
Pulsed Drain Current1
A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
Total Power Dissipation4
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
Storage Temperature Range
Operating Junction Temperature Range
20
V/ns
W
PD@TC=25℃
PD@TA=25℃
EAS
147
3.12
300
W
mJ
V/ns
℃
dv/dt
15
TSTG
-55 to 150
-55 to 150
TJ
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
0.85
40
Rthj-a
1
201802131