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AP60L02GH PDF预览

AP60L02GH

更新时间: 2024-09-15 20:08:55
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关脉冲晶体管
页数 文件大小 规格书
6页 80K
描述
TRANSISTOR 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE PACKAGE-3, FET General Purpose Power

AP60L02GH 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.71雪崩能效等级(Eas):61 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (ID):50 A最大漏源导通电阻:0.012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):180 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP60L02GH 数据手册

 浏览型号AP60L02GH的Datasheet PDF文件第2页浏览型号AP60L02GH的Datasheet PDF文件第3页浏览型号AP60L02GH的Datasheet PDF文件第4页浏览型号AP60L02GH的Datasheet PDF文件第5页浏览型号AP60L02GH的Datasheet PDF文件第6页 
AP60L02GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
25V  
12mΩ  
50A  
D
S
Simple Drive Requirement  
Fast Switching  
G
Description  
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP60L02GJ) is available for low-profile applications.  
G
D
S
TO-252(H)  
TO-251(J)  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
25  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
± 20  
Continuous Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=100℃  
IDM  
50  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
32  
180  
A
A
PD@TC=25℃  
Total Power Dissipation  
62.5  
W
Linear Derating Factor  
0.5  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
2.0  
Unit  
/W  
/W  
Rthj-case  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-amb  
110  
Data & specifications subject to change without notice  
200227032  

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