Datasheet > AP60AN650I

AP60AN650I

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	65K
描述
TO-220CFM

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AP60AN650I 数据手册

AP60AN650I

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% UIS Test

BV_DSS

600V

0.65Ω

11A

▼ Simple Drive Requirement

R_DS(ON)

▼ Fast Switching Characteristic

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP60AN650 series are from the innovated design and silicon

process technology to achieve the lowest possible on-resistance and

fast switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

TO-220CFM(I)

The TO-220CFM package is widely preferred for all commercial-

industrial through hole applications. The mold compound provides a

high isolation voltage capability and low thermal resistance between

the tab and the external heat-sink.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

600

Units

V_DS

V_GS

Gate-Source Voltage

+30

I_D@T_C=25℃

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_DM

P_D@T_C=25℃

Total Power Dissipation

℃

P_D@T_A=25℃

Total Power Dissipation

1.92

E_AS

T_STG

T_J

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

60.5

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

3.2

Rthj-a

201901071

12 3 4 5

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