Datasheet > AP60AN4K8IT

AP60AN4K8IT

更新时间： 2024-11-19 17:15:43

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	218K
描述
TO-220CFM-T

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AP60AN4K8IT 数据手册

AP60AN4K8IT

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% UIS Test

BV_DSS

600V

4.8Ω

1.8A

▼ Simple Drive Requirement

R_DS(ON)

▼ Fast Switching Characteristic

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP60AN4K8 series are from the innovated design and silicon

process technology to achieve the lowest possible on-resistance

and fast switching performance. It provides the designer with an

extreme efficient device for use in a wide range of power

applications.

TO-220CFM-T(IT)

The TO-220CFM package is widely preferred for all commercial-

industrial through hole applications. The mold compound provides

a high isolation voltage capability and low thermal resistance

between the tab and the external heat-sink.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

600

Units

V_DS

V_GS

Gate-Source Voltage

+30

I_D@T_C=25℃

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

1.8

I_DM

7.2

P_D@T_C=25℃

Total Power Dissipation

27.8

℃

P_D@T_A=25℃

Total Power Dissipation

1.92

E_AS

T_STG

T_J

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

4.5

Rthj-a

202007101

12 3 4 5

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