5秒后页面跳转
AP60AN4K8H PDF预览

AP60AN4K8H

更新时间: 2024-11-18 17:15:35
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 231K
描述
TO-252

AP60AN4K8H 数据手册

 浏览型号AP60AN4K8H的Datasheet PDF文件第2页浏览型号AP60AN4K8H的Datasheet PDF文件第3页浏览型号AP60AN4K8H的Datasheet PDF文件第4页浏览型号AP60AN4K8H的Datasheet PDF文件第5页 
AP60AN4K8H  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% UIS Test  
BVDSS  
600V  
4.8Ω  
1.8A  
D
S
Simple Drive Requirement  
RDS(ON)  
3
Fast Switching Characteristic  
ID  
G
RoHS Compliant & Halogen-Free  
Description  
AP60AN4K8 series are from the innovated design and silicon  
process technology to achieve the lowest possible on-resistance  
and fast switching performance. It provides the designer with an  
extreme efficient device for use in a wide range of power  
applications.  
G
D
S
TO-252(H)  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
600  
Units  
V
VDS  
VGS  
Gate-Source Voltage  
+30  
V
ID@TC=25  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
1.8  
A
IDM  
7.2  
A
PD@TC=25℃  
Total Power Dissipation  
Total Power Dissipation5  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
31.2  
W
W
mJ  
PD@TA=25℃  
2
EAS  
TSTG  
TJ  
20  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)5  
4
Rthj-a  
62.5  
1
201912301