AP60AN2K3J
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% UIS Test
BVDSS
600V
2.37Ω
4A
D
S
▼ Simple Drive Requirement
RDS(ON)
3
▼ Fast Switching Characteristic
ID
G
▼ RoHS Compliant & Halogen-Free
Description
AP60AN2K3 series are from the innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
G
D
S
TO-251(J)
The straight lead version TO-251 package is widely preferred for all
commercial-industrial through hole applications.
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Rating
Units
V
VDS
VGS
600
Gate-Source Voltage
+30
V
ID@TC=25℃
Drain Current, VGS @ 10V3
Pulsed Drain Current1
4
12
A
IDM
A
PD@TC=25℃
Total Power Dissipation
50
W
W
mJ
℃
℃
PD@TA=25℃
Total Power Dissipation
1.13
EAS
TSTG
TJ
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
8
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
2.5
Rthj-a
110
1
201711221