5秒后页面跳转
AP60AN2K3J PDF预览

AP60AN2K3J

更新时间: 2024-11-21 17:15:39
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 63K
描述
TO-251

AP60AN2K3J 数据手册

 浏览型号AP60AN2K3J的Datasheet PDF文件第2页浏览型号AP60AN2K3J的Datasheet PDF文件第3页浏览型号AP60AN2K3J的Datasheet PDF文件第4页浏览型号AP60AN2K3J的Datasheet PDF文件第5页 
AP60AN2K3J  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% UIS Test  
BVDSS  
600V  
2.37Ω  
4A  
D
S
Simple Drive Requirement  
RDS(ON)  
3
Fast Switching Characteristic  
ID  
G
RoHS Compliant & Halogen-Free  
Description  
AP60AN2K3 series are from the innovated design and silicon  
process technology to achieve the lowest possible on-resistance and  
fast switching performance. It provides the designer with an extreme  
efficient device for use in a wide range of power applications.  
G
D
S
TO-251(J)  
The straight lead version TO-251 package is widely preferred for all  
commercial-industrial through hole applications.  
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
Units  
V
VDS  
VGS  
600  
Gate-Source Voltage  
+30  
V
ID@TC=25  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
4
12  
A
IDM  
A
PD@TC=25℃  
Total Power Dissipation  
50  
W
W
mJ  
PD@TA=25℃  
Total Power Dissipation  
1.13  
EAS  
TSTG  
TJ  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
8
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
2.5  
Rthj-a  
110  
1
201711221