The Communications Edge TM
AP501
PCS-band 4W HBT Amplifier Module
Product Information
Product Features
Product Description
Functional Diagram
The AP501 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 32.5 dB gain, while being able to
achieve high performance for PCS-band applications with
+36 dBm of compressed 1dB power. The module has been
internally optimized for driver applications provide -62 dBc
ACPR at 27 dBm for IS-95A applications or -55 dBc ACLR
at 26.5 for wCDMA applications. The module can be biased
down for current when higher efficiency is required.
• 1930 – 1990 MHz
• 32.5 dB Gain
• +36 dBm P1dB
• -62 dBc ACPR
@ 27 dBm IS-95A linear power
1
2
3
4
5
6
• -55 dBc ACLR
Top View
@ 26.5 dBm wCDMA linear power
• +12 V Single Supply
Pin No.
1
2 / 4
3 / 5
6
Function
RF Output
Vcc
Vpd
RF Input
Ground
The AP501 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance to ensure long
lifetimes. All devices are 100% RF and DC tested.
• Power Down Mode
• Bias Current Adjustable
• RoHS-compliant flange-mount pkg
Case
Applications
• Final stage amplifiers for repeaters
• Optimized for driver amplifier
PA mobile infrastructure
The AP501 is targeted for use as a driver or final stage amplifier
in wireless infrastructure where high linearity and high power is
required. This combination makes the device an excellent
candidate for next generation multi-carrier 3G base stations.
Specifications
Typical Performance (4)
25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture
Parameter
Units Config1 Config2
Parameter
Operational Bandwidth
Units Min Typ Max
Operating Current @ 27 dBm
Quiescent Current, Icq
Device Voltage, Vcc
R7 value
mA
mA
V
840
820
+12
0
420
250
+12
730
1960
30.5
-53
-49
20
MHz
MHz
dB
1930 – 1990
1960
32.4
-61.8
-55
Test Frequency
Power Gain
30
30.5
-55
Ω
IS-95A ACPR @ 27dBm (1)
dBc
Test Frequency
MHz
dB
dBc
1960
32.4
-61.8
-55
22
wCDMA ACLR @ 26.5dBm(2) dBc
Power Gain
IS-95A ACPR @ 27dBm (1)
Input Return Loss
Output Return Loss
Output P1dB
dB
dB
22
6
wCDMA ACLR @ 26.5dBm (2) dBc
dBm
dBm
mA
mA
V
+36
+52
Input Return Loss
Output Return Loss
Output P1dB
dB
dB
Output IP3
6
8
Operating Current @ 27 dBm
Quiescent Current, Icq
Device Voltage, Vcc
Device Voltage, Vpd (3)
Load Stability
790
780
840
820
+12
940
920
dBm
dBm
+36
+52
+36
+52
Output IP3
4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture.
Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730Ω, 50Ω tuned fixture.
V
+5
VSWR 10:1
1. IS-95A signal modulation, 9 channels forward, 1.23 MHz BW, ±885 kHz offset.
2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.
3. Pull-down voltage: 0V = “OFF”, 5V=”ON”
Absolute Maximum Rating
Ordering Information
Parameter
Rating
-40 to +85 °C
-55 to +150 °C
Operating Case Temperature
Storage Temperature
Part No.
AP501
Description
PCS-band 4W HBT Amplifier Module
RF Input Power (continuous)
Fully-Assembled Evaluation Board
+15 dBm
AP501-PCB
with output terminated in 50 Ω
(Class AB configuration, Icq=820mA)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
Page 1 of 5 February 2006
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
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