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AP5000A-00 PDF预览

AP5000A-00

更新时间: 2024-11-21 19:46:19
品牌 Logo 应用领域
ASI 开关二极管
页数 文件大小 规格书
1页 69K
描述
Pin Diode, 500V V(BR), Silicon, CASE 00, 2 PIN

AP5000A-00 技术参数

生命周期:Active包装说明:S-XUUC-N1
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.65应用:SWITCHING
最小击穿电压:500 V配置:SINGLE
最大二极管电容:0.1 pF二极管元件材料:SILICON
最大二极管正向电阻:1.2 Ω二极管类型:PIN DIODE
JESD-30 代码:S-XUUC-N1JESD-609代码:e4
少数载流子标称寿命:0.6 µs元件数量:1
端子数量:1最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
最大功率耗散:0.25 W认证状态:Not Qualified
表面贴装:YES技术:POSITIVE-INTRINSIC-NEGATIVE
端子面层:GOLD端子形式:NO LEAD
端子位置:UPPERBase Number Matches:1

AP5000A-00 数据手册

  
AP5000A-00  
SILICON PIN DIODE  
PACKAGE STYLE 00  
DESCRIPTION:  
The AP5000A-00 is a Passivated  
Epitaxial Silicon PIN Diode. This  
Device is Designed to Cover a Wide  
Range of control Applications Such as  
RF Switching, Phase Shifting,  
Modulation, Duplexing Limiting and  
Pulse Forming.  
MAXIMUM RATINGS  
100 mA  
500 V  
IC  
VCE  
PDISS  
TJ  
250 mW @ TA = 25 °C  
-65 °C to +175 °C  
-65 °C to +175 °C  
18 °C/W  
TSTG  
θR  
NONE  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
VB  
TEST CONDITIONS  
MINIMUM  
TYPICAL MAXIMUM  
UNITS  
V
500  
IR = 10 µA  
VR = 6.0 V  
f = 1.0 MHz  
f = 1.0 GHz  
0.10  
2.0  
CJ  
RS  
pF  
IF = 20 mA  
IF = 100 mA  
IF = 10 mA  
IF = 10 mA  
1.2  
TL  
TS  
IR = 6.0 mA  
VR = 10 V  
1200  
nS  
nS  
µM  
600  
30  
I-REGION  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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