Datasheet > AP4P013LEP

AP4P013LEP

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	71K
描述
TO-220

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AP4P013LEP 数据手册

AP4P013LEP

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-resistance

BV_DSS

R_DS(ON)

I_D

-40V

14.5mΩ

-50A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP4P013LE series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-220(P)

The TO-220 package is widely preferred for all commercial-

industrial through hole applications. The low thermal resistance and

low package cost contribute to the worldwide popular package.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

-40

Units

V_DS

V_GS

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-50

-31.2

-200

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

54.3

℃

Total Power Dissipation

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

2.3

Rthj-a

201612231

12 3 4 5 6

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