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AP4P013LEP PDF预览

AP4P013LEP

更新时间: 2024-09-14 17:15:35
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 71K
描述
TO-220

AP4P013LEP 数据手册

 浏览型号AP4P013LEP的Datasheet PDF文件第2页浏览型号AP4P013LEP的Datasheet PDF文件第3页浏览型号AP4P013LEP的Datasheet PDF文件第4页浏览型号AP4P013LEP的Datasheet PDF文件第5页浏览型号AP4P013LEP的Datasheet PDF文件第6页 
AP4P013LEP  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Low On-resistance  
BVDSS  
RDS(ON)  
ID  
-40V  
14.5mΩ  
-50A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
AP4P013LE series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for all commercial-  
industrial through hole applications. The low thermal resistance and  
low package cost contribute to the worldwide popular package.  
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
-40  
Units  
V
VDS  
VGS  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
-50  
A
-31.2  
-200  
A
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
54.3  
W
W
mJ  
Total Power Dissipation  
2
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
45  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
2.3  
62  
Rthj-a  
1
201612231