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AP4P012LEH PDF预览

AP4P012LEH

更新时间: 2024-10-31 17:15:51
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 71K
描述
TO-252

AP4P012LEH 数据手册

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AP4P012LEH  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Low On-resistance  
BVDSS  
RDS(ON)  
ID  
-40V  
13.5mΩ  
-51A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
AP4P012LE series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
G
D
S
TO-252(H)  
The TO-252 package is widely preferred for all commercial-  
industrial surface mount applications using infrared reflow technique  
and suited for high current application due to the low connection  
resistance.  
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
-40  
Units  
V
VDS  
VGS  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
-51  
A
-32  
A
-200  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
Total Power Dissipation3  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
54.3  
W
W
mJ  
2
45  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
2.3  
Rthj-a  
62.5  
1
201612281