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AP4NA3R5HCST PDF预览

AP4NA3R5HCST

更新时间: 2024-10-31 17:15:55
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 76K
描述
SPPAK-5x6

AP4NA3R5HCST 数据手册

 浏览型号AP4NA3R5HCST的Datasheet PDF文件第2页浏览型号AP4NA3R5HCST的Datasheet PDF文件第3页浏览型号AP4NA3R5HCST的Datasheet PDF文件第4页浏览型号AP4NA3R5HCST的Datasheet PDF文件第5页浏览型号AP4NA3R5HCST的Datasheet PDF文件第6页 
AP4NA3R5HCST  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Rg & UIS Test  
BVDSS  
40V  
D
S
Simple Drive Requirement  
Low On-resistance  
RDS(ON)  
3.8mΩ  
G
RoHS Compliant & Halogen-Free  
D
Description  
AP4NA3R5HC series are from Advanced Power innovated design  
and silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
G
S
S
S
SPPAK 5x6  
The SPPAK 5x6 package is special for DC-DC converters  
application and the foot print is compatible with SO-8 with backside  
heat sink and lower profile.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
40  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V6(Silicon Limited)  
Drain Current, VGS @ 10V6(Package Limited)  
ID@TC=25  
ID@TC=25℃  
ID@TC=100℃  
ID@TA=25℃  
ID@TA=70℃  
IDM  
107  
A
100  
A
Drain Current , VGS @ 10V  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
67  
A
27.8  
22  
A
A
300  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
Total Power Dissipation3  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
73.5  
5
W
W
mJ  
45  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
1.7  
25  
Rthj-a  
1
202208191