AP4NA3R5HCST
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
40V
D
S
▼ Simple Drive Requirement
▼ Low On-resistance
RDS(ON)
3.8mΩ
G
▼ RoHS Compliant & Halogen-Free
D
Description
AP4NA3R5HC series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
S
S
S
SPPAK 5x6
The SPPAK 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
40
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V6(Silicon Limited)
Drain Current, VGS @ 10V6(Package Limited)
ID@TC=25℃
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
107
A
100
A
Drain Current , VGS @ 10V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
67
A
27.8
22
A
A
300
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
73.5
5
W
W
mJ
℃
℃
45
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
1.7
25
Rthj-a
1
202208191