5秒后页面跳转
AP4NA2R4IT PDF预览

AP4NA2R4IT

更新时间: 2024-11-19 17:15:23
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 109K
描述
TO-220CFM-T

AP4NA2R4IT 数据手册

 浏览型号AP4NA2R4IT的Datasheet PDF文件第2页浏览型号AP4NA2R4IT的Datasheet PDF文件第3页浏览型号AP4NA2R4IT的Datasheet PDF文件第4页浏览型号AP4NA2R4IT的Datasheet PDF文件第5页浏览型号AP4NA2R4IT的Datasheet PDF文件第6页 
AP4NA2R4IT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Rg & UIS Test  
BVDSS  
RDS(ON)  
ID  
40V  
2.4mΩ  
88A  
Ultra-low On-resistance  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
AP4NA2R4seriesarefromAdvancedPowerinnovateddesign and  
siliconprocesstechnologyto achievethelowest possible on-  
resistanceandfastswitchingperformance.Itprovidesthedesigner  
withanextremeefficientdeviceforusein awide rangeof power  
applications.
G
D
S
TO-220CFM-T(IT)  
TheTO-220CFMpackage iswidelypreferred forall commercial-  
industrialthroughholeapplications.Themoldcompoundprovides  
ahighisolationvoltage capability and low thermal resistance  
between the tab and the external heat-sink.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
40  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
88  
A
55  
A
360  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
31.2  
W
W
mJ  
Total Power Dissipation  
1.92  
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
101  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
4
Rthj-a  
65  
1
202007071