Datasheet > AP4NA2R2HCST

AP4NA2R2HCST

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	109K
描述
SPPAK-5x6

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AP4NA2R2HCST 数据手册

AP4NA2R2HCST

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

40V

▼ Simple Drive Requirement

▼ Low On-resistance

R_DS(ON)

2.28mΩ

▼ RoHS Compliant & Halogen-Free

Description

AP4NA2R2HC series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

SPPAK 5x6

The SPPAK 5x6 package is special for DC-DC converters

application and the foot print is compatible with SO-8 with backside

heat sink and lower profile.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Gate-Source Voltage

Rating

Units

V_DS

V_GS

+20

Drain Current, V_GS@ 10V⁵(Silicon Limited)

Drain Current, V_GS@ 10V⁵(Package Limited)

Drain Current , V_GS@ 10V⁵(Package Limited)

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

160

100

36.5

500

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁴

96.1

℃

T_STG

Storage Temperature Range

-55 to 150

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

1.3

Rthj-a

202212141

12 3 4 5 6

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