Datasheet > AP4NA1R8MT-A

AP4NA1R8MT-A

更新时间： 2024-09-14 17:15:55

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	238K
描述
PMPAK-5x6

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AP4NA1R8MT-A 数据手册

AP4NA1R8MT-A

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

45V

▼ Simple Drive Requirement

▼ Ultra Low On-resistance

R_DS(ON)

1.8mΩ

▼ RoHS Compliant & Halogen-Free

Description

AP4NA1R8 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The PMPAK

5x6 package is special for DC-DC converters

PMPAK^®5x6

application and the foot print is compatible with SO-8 with backside

heat sink and lower profile.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V⁴(Silicon Limited)

Drain Current, V_GS@ 10V⁴

Drain Current, V_GS@ 10V³

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

196

Pulsed Drain Current¹

400

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁵

Storage Temperature Range

Operating Junction Temperature Range

104

℃

125

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

1.2

Rthj-a

202103291

12 3 4 5 6

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