Datasheet > AP4N4R2H

AP4N4R2H

更新时间： 2024-09-14 17:15:55

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	111K
描述
TO-252

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中文翻译

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AP4N4R2H 数据手册

AP4N4R2H

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

40V

▼ Simple Drive Requirement

R_DS(ON)

4.2mΩ

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP46N044R2sesreierisesaraerefrforommAAddvvaanncceeddPPoowweerr iinnnnoovvaatteedd design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

TO-252(H)

The TO-220 package is widely preferred for all commercial-

iTnhdeusTtrOia-l252thrpoaucgkhagehoislewidaeplpylicparetiofenrsre. d Tfohrealllocwommtheerrcmiaal-l

rinedsuisstatrniaclesaunrfdacloewmpoaucnktagaeppcolicsat tcioonnstribuustinegtointfhrearewdorlrdewfliodwe

pteocphunlaiqrupeacaknadges.uited for high current application due to the

low connection resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

+20

Gate-Source Voltage

Drain Current, V_GS@ 10V⁴(Silicon Limited)

Drain Current, V_GS@ 10V⁴

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

52.8

300

Pulsed Drain Current¹

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation⁵

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

℃

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁵

2.4

Rthj-a

62.5

201709201

12 3 4 5 6

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