Datasheet > AP4N2R6I-A

AP4N2R6I-A

更新时间： 2024-10-31 17:15:19

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	248K
描述
TO-220CFM

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AP4N2R6I-A 数据手册

AP4N2R6I-A

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

45V

2.68mΩ

80A

▼ Ultra-low On-resistance

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

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TO-220CFM(I)

The TO-220 package is widely preferred for all commercial-

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paachkigahge.isolation voltage capability and low thermal resistance

between the tab and the external heat-sink.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

50.8

300

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

31.2

℃

Total Power Dissipation

1.92

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

Rthj-a

201911121

12 3 4 5 6

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