Datasheet > AP4A021M

AP4A021M

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
8页	258K
描述
SO-8

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中文翻译

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AP4A021M 数据手册

AP4A021M

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

40V

21mΩ

9.6A

▼ Low Gate Charge

R_DS(ON)

▼ Fast Switching Performance

I_D

▼ RoHS Compliant & Halogen-Free

SO-8

Description

AP4A021 series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

The SO-8 package is widely preferred for all commercial-

industrial surface mount applications using infrared reflow

technique and suited for voltage conversion or switch

applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

9.6

8.1

P_D@T_A=25℃

E_AS

Total Power Dissipation

Single Pulse Avalanche Energy⁴

Storage Temperature Range

3.75

℃

7.2

T_STG

-55 to 175

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

202310161

12 3 4 5 6 7 8

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