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AP4578GM-HF PDF预览

AP4578GM-HF

更新时间: 2024-09-30 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 栅极驱动
页数 文件大小 规格书
8页 199K
描述
Simple Drive Requirement, Lower Gate Charge

AP4578GM-HF 数据手册

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AP4578GM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
N-CH BVDSS  
60V  
64mΩ  
4.5A  
D2  
D2  
Lower Gate Charge  
Fast Switching Performance  
RoHS Compliant  
RDS(ON)  
D1  
D1  
ID  
P-CH BVDSS  
RDS(ON)  
G2  
S2  
-60V  
G1  
SO-8  
S1  
125mΩ  
-3A  
Description  
ID  
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
D2  
D1  
G2  
G1  
The SO-8 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
-60  
VDS  
VGS  
Drain-Source Voltage  
60  
±20  
4.5  
3.6  
20  
V
V
Gate-Source Voltage  
±20  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-3  
A
-2.4  
A
-20  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.0  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
200805191  

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