Datasheet > AP4578GH_11

AP4578GH_11

更新时间： 2024-01-01 09:05:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		驱动
页数	文件大小	规格书
7页	128K
描述
Simple Drive Requirement, Good Thermal Performance

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AP4578GH_11 数据手册

AP4578GH

RoHS-compliant Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

60V

72mΩ

D1/D2

▼ Good Thermal Performance

▼ Fast Switching Performance

R_DS(ON)

I_D

P-CH BV_DSS

R_DS(ON)

-60V

125mΩ

-6A

TO-252-4L

Description

I_D

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

V_DS

V_GS

Drain-Source Voltage

+25

-60

+25

-6

Gate-Source Voltage

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-4

-30

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

8.9

0.07

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case³

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

110

Data and specifications subject to change without notice

201108113

12 3 4 5 6 7

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