Datasheet > AP4575GM_12

AP4575GM_12

更新时间： 2024-09-30 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		驱动
页数	文件大小	规格书
7页	79K
描述
Simple Drive Requirement, Low On-resistance

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AP4575GM_12 数据手册

AP4575GM

RoHS-compliant Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

R_DS(ON)

60V

▼ Low On-resistance

36mΩ

▼ Fast Switching Performance

I_D

P-CH BV_DSS

R_DS(ON)

-60V

72mΩ

-4.2A

SO-8

Description

I_D

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

-60

V_DS

V_GS

Drain-Source Voltage

+20

Gate-Source Voltage

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-4.2

4.7

-3.3

-30

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

2.0

W/℃

℃

0.016

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201211293

12 3 4 5 6 7

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