生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.82 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 5.8 A |
最大漏源导通电阻: | 0.036 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP4523GD | A-POWER |
获取价格 |
Low Gate Charge, Fast Switching Speed, PDIP-8 Package | |
AP4523GH | A-POWER |
获取价格 |
Simple Drive Requirement, Good Thermal Performance | |
AP4523GM | A-POWER |
获取价格 |
Simple Drive Requirement, Low On-resistance | |
AP4525GEH | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4525GEH_08 | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4525GEH-A | A-POWER |
获取价格 |
NAND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4525GEH-HF | A-POWER |
获取价格 |
TRANSISTOR POWER, FET, FET General Purpose Power | |
AP4525GEM | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4525GEM-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Low On-resistance | |
AP4526AGH-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Good Thermal Performance |