AP4515GM-HF

更新时间： 2024-09-27 12:59:47

品牌	Logo	应用领域
富鼎先进 - A-POWER		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
7页	86K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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AP4515GM-HF 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.72	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

AP4515GM-HF 数据手册

AP4515GM

Pb Free Plating Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

35V

22mΩ

7.7A

▼ Lower Gate Charge

▼ Fast Switching Performance

▼ RoHS Compliant

R_DS(ON)

I_D

P-CH BV_DSS

R_DS(ON)

-35V

SO-8

40mΩ

-5.7A

Description

I_D

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

The SO-8 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

V_DS

V_GS

Drain-Source Voltage

±20

7.7

6.2

-35

±12

-5.7

-4.6

-30

Gate-Source Voltage

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

2.0

0.016

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200408051-1/7

12 3 4 5 6 7

中文翻译

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