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AP4513GH-A PDF预览

AP4513GH-A

更新时间: 2024-11-18 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲驱动
页数 文件大小 规格书
8页 158K
描述
Simple Drive Requirement, Good Thermal Performance

AP4513GH-A 技术参数

生命周期:Obsolete零件包装代码:TO-252
包装说明:ROHS COMPLIANT PACKAGE-5针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.71
外壳连接:DRAIN配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:35 V最大漏极电流 (ID):7.7 A
最大漏源导通电阻:0.032 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G4
元件数量:2端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP4513GH-A 数据手册

 浏览型号AP4513GH-A的Datasheet PDF文件第2页浏览型号AP4513GH-A的Datasheet PDF文件第3页浏览型号AP4513GH-A的Datasheet PDF文件第4页浏览型号AP4513GH-A的Datasheet PDF文件第5页浏览型号AP4513GH-A的Datasheet PDF文件第6页浏览型号AP4513GH-A的Datasheet PDF文件第7页 
AP4513GH-A  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
N-CH BVDSS  
35V  
32mΩ  
7.7A  
D1/D2  
Good Thermal Performance  
Fast Switching Performance  
RDS(ON)  
ID  
P-CH BVDSS  
RDS(ON)  
S1  
G1  
-35V  
S2  
G2  
68mΩ  
-5.5A  
TO-252-4L  
Description  
ID  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D1  
D2  
G2  
G1  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
-35  
VDS  
VGS  
Drain-Source Voltage  
35  
±20  
7.7  
6.2  
40  
V
V
Gate-Source Voltage  
±20  
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-5.5  
A
-4.4  
A
-40  
A
PD@TA=25℃  
Total Power Dissipation  
Linear Derating Factor  
3.125  
W
W/℃  
0.025  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
10  
Units  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient3  
Max.  
Max.  
Rthj-a  
40  
Data and specifications subject to change without notice  
200627072-1/7  

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