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AP4503BGO-HF PDF预览

AP4503BGO-HF

更新时间: 2024-11-18 12:26:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 栅极驱动
页数 文件大小 规格书
7页 151K
描述
Simple Drive Requirement, Lower Gate Charge

AP4503BGO-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TSSOP
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantHTS代码:8541.29.00.75
风险等级:5.67配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏源导通电阻:0.023 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM):20 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP4503BGO-HF 数据手册

 浏览型号AP4503BGO-HF的Datasheet PDF文件第2页浏览型号AP4503BGO-HF的Datasheet PDF文件第3页浏览型号AP4503BGO-HF的Datasheet PDF文件第4页浏览型号AP4503BGO-HF的Datasheet PDF文件第5页浏览型号AP4503BGO-HF的Datasheet PDF文件第6页浏览型号AP4503BGO-HF的Datasheet PDF文件第7页 
AP4503BGO-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
N-CH BVDSS  
30V  
23mΩ  
6.3A  
G2  
S2  
S2  
D2  
Lower Gate Charge  
RDS(ON)  
G1  
S1  
Fast Switching Performance  
RoHS Compliant & Halogen-Free  
ID  
P-CH BVDSS  
RDS(ON)  
S1  
TSSOP-8  
D1  
-30V  
35mΩ  
-5.2A  
Description  
ID  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D1  
D2  
G2  
G1  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
-30  
VDS  
VGS  
Drain-Source Voltage  
30  
+20  
6.3  
5.0  
20  
V
V
Gate-Source Voltage  
+20  
-5.2  
-4.2  
-20  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
A
A
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
1.38  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
90  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201104201  

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