生命周期: | Contact Manufacturer | 零件包装代码: | TSSOP |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | HTS代码: | 8541.29.00.75 |
风险等级: | 5.67 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏源导通电阻: | 0.023 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大脉冲漏极电流 (IDM): | 20 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP4503GM | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4503GM_10 | A-POWER |
获取价格 |
Simple Drive Requirement, Low On-resistance | |
AP4503GM-HF | A-POWER |
获取价格 |
TRANSISTOR POWER, FET, FET General Purpose Power | |
AP4506GEH | A-POWER |
获取价格 |
Simple Drive Requirement, Good Thermal Performance | |
AP4506GEH-HF | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4506GEM | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4506GEM-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Low On-resistance | |
AP4509AGH-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Good Thermal Performance | |
AP4509AGM-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Low Gate Charge | |
AP4509GM | A-POWER |
获取价格 |
Simple Drive Requirement, Low On-resistance |