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AP4503AGEM-HF

更新时间： 2024-11-18 12:51:55

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
7页	120K
描述
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AP4503AGEM-HF 数据手册

AP4503AGEM-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

30V

26mΩ

▼ Lower Gate Charge

R_DS(ON)

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

I_D

P-CH BV_DSS

R_DS(ON)

-30V

52mΩ

-5A

SO-8

Description

I_D

AP4503A series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The SO-8 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and

suited for voltage conversion or switch applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

-30

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

7.0

5.5

+20

-5.0

-4.0

-20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201304011

12 3 4 5 6 7

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